TCAD simulation methodology for electrothermal analysis of discrete devices including package

摘要

In this paper, three methodologies for fully coupled rigorous electrothermal simulation of discrete devices including the package are proposed. The first one is based on full 3D modeling using TCAD tools applied to a simple BJT. The second approach, using combined 2D/3D modeling, is applied to a multiple-stripe BJT design that reduces the computation time by a factor of 10 while maintaining a reasonable accuracy. In the third approach we propose a smart coupling between the device and the package that combines the speed and accuracy of mixed-mode and couples temperature non-uniformity to the active device electrothermal behavior.