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A robust and production worthy addressable array architecture for deep sub-micron MOSFET's matching characterization

机译:一种强大而生产的可寻址阵列架构,用于深次微米MOSFET匹配表征

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摘要

A robust addressable array test structure is presented, which allows automated characterization of the MOSFET's matching, with high area and time efficiency, accuracy and repeatability. It features CMOS switches to ensure a full test operation range, and prevent gate oxide breakdown of individual DUTs from destroying the functionality of the whole test structure. The test structure provides superior isolation to minimize cross talk while providing greater flexibility in testing. Testing result (I{sub}d mismatch) on wafers of 0.18μm Technology will be presented.
机译:提出了一种强大的可寻址阵列测试结构,允许自动表征MOSFET的匹配,面积和时间效率高,准确性和可重复性。它具有CMOS开关,以确保完全测试操作范围,并防止单个DUT的栅极氧化栅崩溃损失整个测试结构的功能。测试结构提供了卓越的隔离,以最大限度地减少交叉谈话,同时提供更大的测试灵活性。将介绍018μm技术的晶片上的测试结果(i {sub} d不匹配)。

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