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Formation of silicided junctions in deep sub-micron MOSFETS by defect enhanced CoSi2 formation
Formation of silicided junctions in deep sub-micron MOSFETS by defect enhanced CoSi2 formation
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机译:通过缺陷增强的CoSi2形成在深亚微米MOSFET中形成硅化物结
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摘要
A method of providing defect enhanced CoSi2 formation and improved silicided junctions in deep submicron MOSFETs. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ ions so as to form an ultra-shallow damage region (7). After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal (4) is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.
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