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Latch-up characterization in standard and twin-tub test structures by electrical measurements, 2-D simulations and IR microscopy

机译:通过电测量,2-D模拟和IR显微镜锁定标准和双桶测试结构的锁存表征

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The influence of different layout parameters on latchup susceptibility was studied on standard four-stripes test structures fabricated using two bulk processes: standard n-well and a twin-tub technology. Twin-tub structures show increased latchup hardness and guard-ring effectiveness, mainly due to the increased doping level and the consequent decrease in substrate and well resistances. Standard and twin-tub structures show marked three-dimensional effects in the holding characteristics, which lead to an uneven distribution of the latchup current within test structures and hysteresis in the I-V characteristics.
机译:在使用两个散装工艺制造的标准四条条纹测试结构上研究了不同布局参数对锁存敏感性的影响:标准N-孔和双桶技术。双桶结构显示出闩锁硬度和防护环效果增加,主要是由于掺杂水平增加和后续衬底和井电阻的降低。标准和双桶结构显示了保持特性的标记为三维效应,这导致闩锁电流在测试结构和I-V特性中滞后的不均匀分布。

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