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Reliability of 3D package using wafer level underfill and low CTE epoxy mold compound materials

机译:使用晶圆级底部填充和低CTE环氧模塑料的3D封装的可靠性

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With the emergence of 3D technology to answer the challenging limits of Moore's Law, certain features in today's 3D IC packages have to be adopted in order to meet the reliability and robustness of this technology. The barriers used for TSV processing, the metallurgy of the μbump, the underfill material used in stacking in combination with the IC assembly materials all play a vital role in the reliability and robustness of a 3D IC package. One of the materials selected for assembly in this 3D package was the underfill between the stacked dies. The underfill provides the mechanical stability for micro-bumps and prevents moisture between the resulting gaps between dies before the 3D stack is sent for packaging. Underfilling options for 3D IC stacks differs significantly to what has been a standard in the industry which is in using capillary underfills. Stacking of the 3D device is currently done using a thermocompression process, which is quite different from the mass reflow chip attach process normally done in the industry. This is mainly due to the narrow gaps and very fine bump pitches of 3D ICs. As a result of these fine and narrow geometry change in 3D stacks, it is quite difficult to use the capillary underfill process in combination with the thermo-compression bonding process. The use of pre-applied underfills such as the Wafer Level Underfills (WLUFs) and No Flow Underfills (NUFs) in combination with the thermo-compression bonding process has shown to be a viable solution for 3D stacking. Using No-Flow Underfills (NUF) in thermo-compression bonding also introduce processing complexities (see Figure 1.0). The complexity lies in dispensing a very accurate volume to fill a gap lower than 15um., in most cases, the amount of underfill material that needs to be dispense is in the submilligram level. Dispensing this amount of material requires very accurate jet dispensers and will need a lot of characterization in terms of jetting the NUFs. By using Wafer - evel Underfills (WLUFs) takes out the complexity of figuring out the correct jetting parameters in order to fill the entire UF gap. But there are several aspects of the said material that needs to be taken into consideration such as its transparency (see Figure 2.0), thickness variations storage/staging conditions and melt viscosity all of which play important roles in making the material useable for 3D stacks. Selection of the correct mold compound to be used for the 3D package is also deemed very important in terms of the reliability performance of the package. The CTE and warpage behavior of the mold compound had to be evaluated and quantified in the selection process (see Figure 3.0). In this paper, the selection process of Wafer Level Underfill and low CTE mold compound materials and the resulting package reliability of the combination of these materials will be shown and discussed. Jedec standard reliability tests (MSL, TCT-B, HTS and PCT) were used in quantifying the reliability performance of the 3D package. Electrical tests on the daisy chain of the test vehicle and package robustness in terms delamination in the interfaces of the package were checked during the different reliability readouts.
机译:随着3D技术的出现,以解决摩尔定律的挑战性局限,必须采用当今3D IC封装中的某些功能,才能满足该技术的可靠性和鲁棒性。用于TSV处理的势垒,μ凸块的冶金学,用于堆叠的底部填充材料与IC组装材料的结合,在3D IC封装的可靠性和耐用性中都起着至关重要的作用。在此3D封装中选择用于组装的材料之一是堆叠模具之间的底部填充。底部填充可为微型凸点提供机械稳定性,并防止在将3D堆栈发送到包装之前在模具之间产生的间隙之间产生水分。 3D IC堆栈的底部填充选项与使用毛细管底部填充的行业标准大不相同。当前,使用热压工艺完成3D设备的堆叠,这与行业中通常进行的大规模回流芯片贴装工艺大不相同。这主要是由于3D IC的间隙窄且凸点间距非常小。由于3D堆栈中这些细微且狭窄的几何形状变化,将毛细管底部填充工艺与热压粘合工艺结合使用非常困难。将预先施加的底部填充料(如晶圆级底部填充料(WLUF)和无流动底部填充料(NUF))与热压粘合工艺结合使用,已证明是3D堆叠的可行解决方案。在热压粘合中使用无流动底部填充胶(NUF)也会带来加工复杂性(请参见图1.0)。复杂性在于分配非常精确的体积以填充小于15um的间隙。在大多数情况下,需要分配的底部填充材料的量在亚毫克级。分配这种数量的材料需要非常精确的喷射分配器,并且在喷射NUF方面需要进行很多表征。通过使用Wafer-evel底部填充材料(WLUF)消除了计算正确的喷射参数以填充整个UF间隙的复杂性。但是,需要考虑上述材料的多个方面,例如其透明度(请参见图2.0),厚度变化的存储/分段条件和熔体粘度,所有这些在使该材料可用于3D堆栈中都起着重要作用。就包装的可靠性而言,选择用于3D包装的正确模塑料也非常重要。模塑料的CTE和翘曲行为必须在选择过程中进行评估和量化(见图3.0)。在本文中,将展示和讨论晶圆级底部填充材料和低CTE模塑料的选择过程,以及这些材料组合所产生的封装可靠性。使用Jedec标准可靠性测试(MSL,TCT-B,HTS和PCT)来量化3D封装的可靠性。在不同的可靠性读数期间,检查了测试车辆的菊花链上的电气测试以及包装在包装界面中的分层方面的坚固性。

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