首页> 外文会议>IEEE Electronics Packaging Technology Conference >Experimental results versus numerical simulations of In/Cu intermetallic compounds growth
【24h】

Experimental results versus numerical simulations of In/Cu intermetallic compounds growth

机译:实验结果与In / Cu金属间化合物生长的数值模拟

获取原文

摘要

Indium is often used as a solder material which also plays a role of thermal interface e.g. in power LED systems. Indium and copper forms the intermetallic compounds. The growth rate constant at 400 K between copper and indium by the molecular dynamics simulations, as well as, experimentally was investigated. The results shown that the growth of the intermetallic compound in both cases follows the parabolic low, which indicates that the growth was mainly controlled by volume diffusion.
机译:铟常被用作焊料材料,它也起着热界面的作用,例如与金属表面接触。在功率LED系统中。铟和铜形成金属间化合物。通过分子动力学模拟以及实验研究了铜和铟之间400 K的生长速率常数。结果表明,两种情况下金属间化合物的生长都遵循抛物线低点,这表明该生长主要受体积扩散控制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号