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Circuit design challenges at the 14nm technology node

机译:14nm技术节点的电路设计挑战

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Technology scaling non-idealities, already apparent in the transitions between previous technology generations, will become even more pronounced as the world moves from the 22nm node to the 14nm node. Digital logic designers working on high-performance microprocessors and similar projects will face significant new challenges as the basic FET structure is changed in a fundamental way, in order to squeeze more performance from scaled devices. New design constraints and new sources of variability will have to be understood, and new methodologies will be required to enable robust, high-speed designs. In addition, the metal interconnects between devices will also be stressed. Scaled wire RC will likely increase, and new tools and methods will be needed to ensure reliable designs.
机译:技术缩放非理想,在先前技术几代之间的过渡中已经明显,随着世界从22nm节点移动到14nm节点的方式变得更加明显。 在高性能微处理器和类似项目上工作的数字逻辑设计师将面临重大的新挑战,因为基本的FET结构以基本的方式改变,以便从缩放设备中挤出更多的性能。 必须了解新的设计限制和新的可变性来源,并且需要新的方法来实现强大的高速设计。 另外,还将施加压力之间的金属互连。 缩放线RC可能会增加,并且需要新的工具和方法来确保可靠的设计。

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