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Room Temperature Tuneable THz Generation Based On Excitonic optical nonlinearities in GaAs/AlGaAs Multi-Quantum Well Structures

机译:基于兴奋光学非线性的GaAs / Algaas多量子井结构的室温可调THz生成

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We report the generation of tuneable THz radiation (0.2-6 THz) and demonstrate a spectroscopic system operating at 750GHz. THz radiation is generated through second order nonlinear effects in the excitation of excitons in GaAs/AlAs multi-quantum wells (MQWs), using readily available continuous wave (CW) laser diodes at room temperature. An MBE grown 30xMQW GaAs(11.9nm)/AlAs(7.1nm) sample was designed to have excitonic resonances at a wavelength accessible by commercially available lasers (~850nm), and have E1HH1-E1LH1 splitting of 9.1meV. Two collimated, normally incident lasers were used to excite the excitonic resonances. Figure 1(a) shows THz power obtained in collinear and crossed polarisations of the lasers with one laser resonant with the HH exciton, and the other laser tuned across the excitonic bands with each laser operating at 130mW output power. A clear signal is observed in the case of collinear excitation which scales with the density of states of the excitons. Power dependence measurements confirm this is a second order non-linear effect. Using a simple interferometer, and fitting the measured power with the expected transmission of a Fabry-Perot etalon, frequency measurements confirm the ability to tune the THz radiation from 0.75-3THz. See Figs 1(b-d). Tuning over the full range of Fig 1(a) indicates that THz generation os possible from ~0.2 to 6THz. For excitation at the peaks of HH and LH, a conversion efficiency of 1.2×10~(-5) was obtained. This was achieved without the use of plasmonic effects, nor any kind of an antenna, nor an applied E-field to the structure. Spectroscopy using this new tuneable/sweepable light source will be presented at the conference. Future prospects for this technology will be discussed.
机译:我们报告了可调调谐的THz辐射(0.2-6至6六个),并展示了在750GHz上运行的光谱系统。通过在GaAs / ALAS多量子孔(MQW)中激发激发的二阶非线性效应中产生THz辐射,在室温下使用易于获得的连续波(CW)激光二极管。 MBE生长的30xMQW GaAs(11.9nm)/ ala(7.1nm)样品被设计成具有可通过市售激光器(〜850nm)的波长的兴奋剂共振,并且具有9.1mev的e1hh1-e1lh1分裂。两次准直,通常入射的激光器用于激发激发器共振。图1(a)示出了在与HH激光器中具有一个激光共振的激光器和交叉的激光偏振的THz功率,并且通过在130mW输出功率下操作的每个激光器在激发器中调节的另一个激光器。在共线激励的情况下观察到清晰的信号,该激励具有激励子状态的密度。功率依赖测量确认这是二阶非线性效果。使用简单的干涉仪,并用预期的法布里 - 珀罗标准龙的预期传输拟合测量的功率,频率测量确认了调节0.75-3THz的THZ辐射的能力。见图1(b-d)。调整在图1(a)的全部范围内,表示THz生成OS可能从〜0.2到6thz。对于HH和LH的峰的激发,获得1.2×10〜(-5)的转化效率。这是在不使用等离子体效应的情况下实现的,也是在结构上的任何一种天线的情况下实现的。会议将在会议上展示使用这种新的可调调谐/可扫描光源的光谱学。将讨论该技术的未来前景。

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