High-speed InP-based double heterojunction bipolar transistors and varactors for three-dimensional Terahertz computed tomography

机译：基于高速INP的双异质结双极晶体管和三维太赫兹计算机断层扫描的变容仪

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We have evaluated the performance of the InP double heterojunction bipolar transistor and InP-based varactors as a room temperature sensitive detectors for THz computed tomography applications. They were used in transmission mode for the 350 GHz and 650 GHz atmospheric windows.

机译：我们已经评估了INP双相相形双极晶体管和基于INP的变容仪作为THz计算机断层扫描应用的室温敏感探测器的性能。它们用于350 GHz和650 GHz大气窗口的传输模式。

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《International Conference on Infrared, Millimeter, and Terahertz Waves》|2017年|798p|共2页
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Dominique Coquillat; Virginie Nodjiadjim; Alexandre Duhant; Meriam Triki; Olivier Strauss; Agnieszka Konczykowska; Muriel Riet; Nina Dyakonova; Wojciech Knap;
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1. InP double heterojunction bipolar transistors for terahertz computed tomography [J] . Dominique Coquillat, Alexandre Duhant, Meriam Triki, AIP Advances . 2018,第8期

机译：用于太赫兹计算机断层扫描的InP双异质结双极晶体管
2. High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors [J] . D. Coquillat, V. Nodjiadjim, S. Blin, International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2016,第3a4期

机译：基于InP双异质结双极晶体管的高速室温太赫兹检测器
3. Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers [J] . Hoshi Takuya, Kashio Norihide, Sugiyama Hiroki, Japanese journal of applied physics . 2017,第7期

机译：具有由GaAsSb接触层和InGaAsSb梯度层组成的混合基础结构的InP基双异质结双极晶体管的金属有机化学气相沉积的组成和掺杂控制
4. High-speed InP-based double heterojunction bipolar transistors and varactors for three-dimensional Terahertz computed tomography [C] . Dominique Coquillat, Virginie Nodjiadjim, Alexandre Duhant, International Conference on Infrared, Millimeter, and Terahertz Waves . 2017

机译：基于高速INP的双异质结双极晶体管和三维太赫兹计算机断层扫描的变容仪
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

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7. Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) [O] . Geonyeop Lee, Stephen J. Pearton, Fan Ren, 2019

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8. In0.69Al0.31As0.41Sb0.59/ In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers [R] . 2010

机译：In0.69al0.31as0.41sb0.59 / In0.27Ga0.73sb双异质结双极晶体管，带Inas0.66sb0.34接触层

High-speed InP-based double heterojunction bipolar transistors and varactors for three-dimensional Terahertz computed tomography

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