首页>
外国专利>
Varactor having improved Q-factor using SiGe heterojunction bipolar transistor and method for fabricating the same
Varactor having improved Q-factor using SiGe heterojunction bipolar transistor and method for fabricating the same
展开▼
机译:使用SiGe异质结双极晶体管具有改善的Q因子的变容二极管及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A varactor includes a semiconductor substrate of a first conductivity type, a high-concentration buried collector region of a second conductivity type formed in an upper portion of the semiconductor substrate, a collector region of the second conductivity type formed on a first surface of the high-concentration buried collector region, a high-concentration collector contact region of the second conductivity type formed on a second surface of the high-concentration buried collector region, a high-concentration silicon-germanium base region of the first conductivity type formed on the collector region, a metal silicide layer formed on the silicon-germanium base region, a first electrode layer formed to contact the metal silicide layer, and a second electrode layer formed to be electrically connected to the collector contact region.
展开▼