Carrier-storage effect and extraction-enhanced lateral IGBT (E2LIGBT): A super-high speed and low on-state voltage LIGBT superior to LDMOSFET

摘要

We have successfully developed novel extraction enhanced lateral insulated gate bipolar transistors (E2LIGBTs), which exhibit super-high speed switching of 34 ns turn-off time and a low on-state voltage of 3.7 V at 84 A/cm2 simultaneously with a high breakdown voltage of 738V. For the first time, E2LIGBTs have exceeded the counterpart lateral DMOS both in switching speed and in on-resistance. The superior performance is achieved by the novel anode structure consisting of a narrow p+-injector and a wide Schottky contact on a lightly doped p-layer over an n-buffer. The on-state voltage can be further reduced to 3.0V at 84 A/cm2 by introducing Carrier Storage (CS) layer. The developed E2LIGBTs achieved the best trade-off between on-resistance and switching speed among all the lateral MOS power devices, so far reported.