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POWER DEVICE HAVING LATERAL INSULATED GATE BIPOLAR TRANSISTOR (LIGBT) AND MANUFACTURING METHOD THEREOF
POWER DEVICE HAVING LATERAL INSULATED GATE BIPOLAR TRANSISTOR (LIGBT) AND MANUFACTURING METHOD THEREOF
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机译:具有横向绝缘栅双极晶体管(LIGBT)的功率器件及其制造方法
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摘要
A power device which is formed on a semiconductor substrate includes: a lateral insulated gate bipolar transistor (LIGBT), a PN diode and a clamp diode. The PN diode is connected in parallel to the LIGBT. The clamp diode has a clamp forward terminal and a clamp reverse terminal, which are electrically connected to a drain and a gate of the LIGBT, to clamp a gate voltage applied to the gate not to be higher than a predetermined voltage threshold.
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