Experimental and Numerical Demonstration of Superior RBSOAs in 1.2 kV SiC Trench and SBD-integrated Trench MOSFETs

摘要

In this study, we investigated the reverse bias safe operating areas (RBSOAs) of three types of state-of-the-art 1.2 kV SiC trench MOSFETs, through experiments and numerical simulations. The experimental results revealed that both SiC trench MOSFETs had significantly larger RBSOAs than a commercial 1.2 kV silicon trench field stop (FS) IGBT. And interestingly, unlike the short-circuit safe operating area (SCSOA), the RBSOA of the Schottky barrier diode-wall integrated trench MOSFET (SWITCH-MOS) was sufficiently large and roughly that of the trench MOSFETs without SBD integration (IE-UMOSFETs). Further, we found that SiC trench MOSFETs with extremely low on-resistance had a very wide RBSOA.