THE EPITAXIAL GROWTH OF HIGH ELECTRON MOBILITY InGaAs BY METALORGANIC CHEMICAL VAPOR DEPOSITION WITH TRIETHYLINDIUM FOR InP-BASED HEMTS

摘要

To improve the quality of epitaxial wafer for InP-based HEMTs, we introduced a new MOCVD machine and new material combination including triethylindium on growing InGaAs channel layer. Thin InGaAs film and the brief HEMTs structure were grown by new material combination. And their electron mobility was compared with the samples grown with general material combination. The result showed new material combination enhanced electron mobility. Furthermore, on fabricated HEMTs devices, the enhancement of static characteristics was found when new material combination was used.