Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor211 Deposition

摘要

InGaAsN alloys are a promising material for increasing the efficiency of multi-211u001ejunction solar cells now used for satellite power systems. However, the growth of 211u001ethese dilute N containing alloys has been challenging with further improvements 211u001ein material quality needed before the solar cell higher efficiencies are 211u001erealized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and 211u001epoor surface morphologies. The growth rate was found to depend on not only the 211u001etotal group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon 211u001etetrachloride and dimethylzinc were effective for p-type doping. Disilane was not 211u001ean effective n-type dopant while SiC14 did result in n-type material but only a 211u001enarrow range of electron concentrations (2-Se17cm-3) were achieved.