AlInAs/GaInAs metamorphic HEMT's on GaAs substrate: from material to device

摘要

AlInAs/GaInAs heterojunctions offer a wide range of applications for electronic and optoelectronic devices. Also heterostructures grown on lattice mismatched substrates allow one to extend the range of composition in the structures and to exploit enhanced properties, provided that the crystalline perfection of the layers as well as electrical quality are preserved. As an example, the development of lattice mismatched AlInAs/GaInAs high electron mobility transistors on high-quality GaAs substrates (metamorphic HEMT) is of primary interest for millimeter-wave devices.