Highly uniform waveguide photodiodes fabricated on a 2-inch wafer with low darkcurrent and high responsivity

摘要

We have fabricated waveguide photodiodes with highly uniform characteristics on a 2-inch wafer introducing a novel process. 2-inch wafer fabrication procedure was carried out successfully utilizing SiN deposition on the back of the wafer for anti-warping. Almost all of the photodiodes exhibited low darkcurrent (average 419 pA, /spl sigma/=49 pA at 10 V reverse bias voltage) and high responsivity of more than 0.95 A/W at the input wavelength of 1.31 /spl mu/m.