This method for manufacturing a germanium slow light waveguide includes:producing, in a silicon plate, a cavity the cross section of which, parallel to the plane of the plate, is identical to the horizontal cross section of the slow light waveguide and the bottom of which is located inside the silicon plate; thencarrying out an operation of vapor phase epitaxial growth of germanium on the bottom of the cavity until this cavity is completely filled with germanium; andbefore implementing said epitaxial growth operation, a protective layer is deposited on an upper face of the silicon plate or, after implementing said epitaxial growth operation, the germanium that has grown on said upper face is removed.展开▼
