Temperature dependence of luminescence decay time of InP quantum disks

摘要

We measured temperature dependence of luminescence decay time of self-assembled InP dots in GaInP lattice-matched to GaAs. The radiative lifetime of InP-dot luminescence is independent of temperature below /spl sim/40 K, and is linear with temperature between /spl sim/40 and /spl sim/120 K. These two features in the two temperature regimes are characteristic of zero-dimensional and two-dimensional structures, respectively. This temperature behavior of the lifetime is thought to be caused by the disk-like shape of the InP dots; they have longer lateral widths than their heights, and thus have an intermediate character between zero-dimensions and two-dimensions.