Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots

摘要

We have systematically investigated the temperature dependence of absorption, photoluminescence (PL), and PL decay profiles in CdTe-core and CdTe/CdS type-II quantum dots (QDs). In CdTe/CdS QDs, Stokes shifts and PL decay time become larger with an increase in temperature above 120 K, while those in CdTe-core QDs are almost independent of temperature. The unusual temperature dependence of Stokes shifts and PL decay time in CdTe/CdS QDs is understood by considering carrier localization at the core/shell interface at low temperatures and thermal-energy-assisted detrapping from localized-exciton to type-II exciton states at higher temperatures. Furthermore, a phenomenological rate-equation model is developed to explain the experimentally observed temperature-dependent PL decay time.