It has been shown that the PIII/PLAD poly-Si gate doping process offers unique advantages over conventional beam line systems, including system simplification, lower cost, higher throughput, and device performance equivalence or improvement. PMOS devices fabricated by a B2H6/H2PIII/PLAD process on P+poly-gate doping are intensively evaluated in this paper. In addition to higher throughput, PMOS devices fabricated by a PLAD process showed an equivalent electrical performance to those fabricated by conventional beam line ion implantation, including similar poly-Si gate resistance and depletion, threshold and sub-threshold characteristics, drive current, and gate-oxide integrity.
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机译：已经表明，PIII / PLAD Poly-Si栅极掺杂工艺提供了与传统光束线系统相比的独特优势，包括系统简化，降低成本，更高的吞吐量以及设备性能等效或改进。 P + Poly-Gate上的B 2 H 6 / H 2 PIII / PLAD工艺制造的PMOS器件本文集中评估了掺杂。除了较高的产量之外，由Plad工艺制造的PMOS器件向由常规光束线离子植入制造的那些而言，包括相似的多Si栅极电阻和耗尽，阈值和子阈值特性，驱动电流和栅极 - 氧化物完整性。
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