Electro-thermo-mechanical simulation of automotive MOSFET transistor

摘要

Today, the reliability forecast is a new challenge for the electronic packaging industry. This paper deals with a 3 dimensional electro-thermo-mechanical modeling method for reliability studies of MOSFET transistor. This modeling method increases the accuracy of the thermo-mechanical computation. The dissipated power mission profile is computed with an electro-thermal co-simulation. The link between chip temperature and dissipated power is modeled for power electronics diodes and MOSFET. Specific MOSFET and diodes temperature dependent models are developed. Modeling method is developed around EPSILON-R3D thermal modeling tool. MODELICA and OpenModelica are used for electric computations. Temperature field is used for the thermo-mechanical study with ANSYS.