首页> 外文期刊>Oral Surgery, Oral Medicine, Oral Pathology, Oral Radiology and Endodontics >Assessment of radiation exposure in dental cone-beam computerized tomography with the use of metal-oxide semiconductor field-effect transistor (MOSFET) dosimeters and Monte Carlo simulations
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Assessment of radiation exposure in dental cone-beam computerized tomography with the use of metal-oxide semiconductor field-effect transistor (MOSFET) dosimeters and Monte Carlo simulations

机译:使用金属氧化物半导体场效应晶体管(MOSFET)剂量计和蒙特卡罗模拟评估牙锥束计算机断层摄影中的辐射暴露

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Objectives: The aims of this study were to assess the organ and effective dose (International Commission on Radiological Protection (ICRP) 103) resulting from dental cone-beam computerized tomography (CBCT) imaging using a novel metal-oxide semiconductor field-effect transistor (MOSFET) dosimeter device, and to assess the reliability of the MOSFET measurements by comparing the results with Monte Carlo PCXMC simulations. Study Design: Organ dose measurements were performed using 20 MOSFET dosimeters that were embedded in the 8 most radiosensitive organs in the maxillofacial and neck area. The dose-area product (DAP) values attained from CBCT scans were used for PCXMC simulations. The acquired MOSFET doses were then compared with the Monte Carlo simulations. Results: The effective dose measurements using MOSFET dosimeters yielded, using 0.5-cm steps, a value of 153 μSv and the PCXMC simulations resulted in a value of 136 μSv. Conclusions: The MOSFET dosimeters placed in a head phantom gave results similar to Monte Carlo simulations. Minor vertical changes in the positioning of the phantom had a substantial affect on the overall effective dose. Therefore, the MOSFET dosimeters constitute a feasible method for dose assessment of CBCT units in the maxillofacial region.
机译:目的:这项研究的目的是评估使用新型金属氧化物半导体场效应晶体管(CBCT)成像的牙锥束计算机断层扫描(CBCT)成像所产生的器官和有效剂量(国际放射防护委员会(ICRP)103) MOSFET剂量计设备,并通过将结果与Monte Carlo PCXMC仿真进行比较来评估MOSFET测量的可靠性。研究设计:使用20个MOSFET剂量计进行器官剂量测量,该剂量计嵌入颌面部和颈部的8个对放射线最敏感的器官中。从CBCT扫描获得的剂量面积积(DAP)值用于PCXMC模拟。然后将获得的MOSFET剂量与Monte Carlo模拟进行比较。结果:使用MOSFET剂量计进行的有效剂量测量以0.5厘米的步长得出153μSv的值,而PCXMC模拟得出的值为136μSv。结论:放置在头部模型中的MOSFET剂量计得出的结果类似于蒙特卡洛模拟。体模位置的垂直变化较小,对总体有效剂量影响很大。因此,MOSFET剂量计构成了评估颌面区域CBCT单元剂量的可行方法。

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