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An analytical approach to efficient circuit variability analysis in scaled CMOS design

机译:缩放CMOS设计中有效电路变化分析的分析方法

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CMOS scaling has led to increasingly high variability in device and circuit performance. To improve design robustness, it is important to consider variation in the design flow. In this paper a closed-form solution is proposed to predict the variability in gate timing, which significantly reduces computation cost in statistical analysis. The proposed model covers both nominal delay and its variability across a wide range of device sizes, load capacitances and input transition times. Stack effect, such as that in NAND and NOR gates, is taken into account thereby making the model sensitive to the switching patterns. For ISCAS'85 benchmark circuits, implemented using a 45nm library, the model demonstrates high accuracy with less than 3.5% error for nominal delay and within 5ps variation of the critical path. Finally, use of the proposed model in design flow is demonstrated for setup time violations.
机译:CMOS缩放导致了设备和电路性能越来越高的可变性。 为了提高设计稳健性,重要的是要考虑设计流程的变化。 在本文中,提出了一种封闭式解决方案以预测栅极定时的可变性,这显着降低了统计分析中的计算成本。 所提出的模型涵盖了众多设备尺寸,负载电容和输入转换时间的标称延迟及其可变性。 考虑到NAND和NOR门中的堆叠效果,如NAND和NOR门,从而使模型对切换模式敏感。 对于ISCAS'85基准电路,使用45nm库实现,该模型表明了高精度,标称延迟的误差小于3.5%,在临界路径的5ps变化范围内。 最后,对设计流程中提出的模型进行了对设置时间违规的使用。

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