Analysis of the influence of voids in solder layer on IGBT failure based on ANSYS

摘要

The temperature field distribution of IGBT module will be inevitably affected by the unavoidable void of solder layer in IGBT module packaging, which will seriously affect the thermal stability. In order to reduce the influence of the void in the encapsulation of IGBT module, the IGBT failure process is analyzed based on ANSYS. In this paper, a three-dimensional model of the IGBT module is established. Then, the influence of solder layer void on the temperature distribution of IGBT module under different sizes and positions is studied based on ANSYS. The results show that under the same void ratio, the void on the top corner of the solder layer has the greatest impact on the junction temperature of the IGBT module. Besides, at the same position, the maximum junction temperature of the IGBT module increases linearly with the increase of the void ratio on the solder layer. The simulation results have guiding significance for improving the thermal stability of IGBT modules.