首页> 外文会议>IEEE/CPMT International Electronic Manufacturing Technology Symposium;IEMT >Further characterization of 2nd bond in bare Cu wire and Pd coated Cu wire on various leadframe plating scheme
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Further characterization of 2nd bond in bare Cu wire and Pd coated Cu wire on various leadframe plating scheme

机译:在各种引线框架电镀方案中,裸露的铜线和涂钯的铜线中2 键的进一步表征

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Degradation of wire bonds in gold and copper ball bonding at high temperature storage normally associated with intermetallic growth defects and/or corrosion defects for the ball bonds (1st bond). Assessments during isothermal aging also mainly focus on intermetallic growth of Au-Al or Cu-Al. In general there is no reliability concern of 2nd bond for gold wire bonding thus far but for 2nd bond of Cu wire bonding there has not been studied sufficiently to date. New failure mechanism (i.e. lifted wedge) that is associated with second bond after high temperature storage had been reported in copper wire bonding. This paper discussed some characteristic of bare Cu and Pd coated Cu wire as bonded and also after high temperature storage. The effect of different wire type and leadframe plating scheme of 2nd bond failures during isothermal aging has been assessed and the mechanism of degradation is discussed.
机译:高温存储下的金和铜球键合中的线键合性能下降通常与金属间生长缺陷和/或球键合(1 st 键合)的腐蚀缺陷有关。等温时效过程中的评估也主要集中在Au-Al或Cu-Al的金属间生长。到目前为止,一般来说,对于金线键合没有2 键的可靠性问题,但是到目前为止,对于铜线键合的2 键没有足够的研究。在铜线焊接中,已经报道了与高温存储后的第二次焊接相关的新的失效机制(即,楔形抬起)。本文讨论了裸铜和钯包覆铜线的键合以及高温保存后的一些特性。评估了等温老化过程中不同导线类型和引线框架电镀方案对2 键失效的影响,并讨论了其降解机理。

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