Charge Transport in Solution-Processed Top-Gate Organic Thin-Film Transistors with Different Gate Insulators

摘要

Charge transport in top-gate OTFTs using solution-processable polycrystalline and amorphous semiconductors with different polymer gate insulators is investigated. Unlike amorphous OTFTs, polycrystalline OTFTs exhibit high field-effect mobility irrespective of the dielectric constant of gate insulators, due to the suppression of dipole disorder. Electrical stability under gate-bias stress is also studied.