POLYMER COMPOUND FOR FORMING ORGANIC GATE INSULATOR OF THIN-FILM TRANSISTOR AND THIN-FILM TRANSISTOR USING THE SAME

摘要

The present invention provides a polymer compound for an organic insulator of a thin-film transistor. According to an embodiment of the present invention, the polymer compound for an organic insulator of a thin-film transistor has a repeating unit represented by Formula 1. According to the present invention, the polymer compound for an organic insulator of a thin-film transistor has greater heat resistance than a conventional organic insulator material and has excellent electric insulation. Accordingly, the polymer compound for an organic insulator of a thin-film transistor can be used as a material of an organic insulator of a metal oxide thin-film transistor for a solution process required to be performed at a high temperature, and the thin-film transistor including the polymer compound as an organic insulator layer has an excellent performance.