Polymer compound for forming organic gate insulator of thin-film transistor and thin-film transistor using the same

摘要

The present invention provides a polymer compound for a thin film transistor organic insulator. The polymer compound for a thin film transistor organic insulator according to the present invention is superior in heat resistance to an organic insulator material known in the art, and has an effect of exhibiting excellent electrical insulation property. Accordingly, the thin film transistor can be used as a material for an organic insulator of a metal oxide thin film transistor for a solution process requiring a high process temperature, and the thin film transistor including the polymer compound according to the present invention as an organic insulator layer has an excellent performance.