Characteristics of Organic Thin-film Transistors with the Synthesized Photo-reactive Polymeric Gate Insulator

摘要

In this study, the photo-reactive polymeric gate insulator was synthesized and the electrical characteristics of organic thin film transistors (OTFTs) according to the UV-exposure direction onto the gate insulator were investigated. The photo-reactive polymer was prepared by substituting hydroxyl group in Poly(4-vinylpbenol) (PVP) with cinnamoyl group. The UV-exposure treatment can modify the interface properties between semiconductor and polymer gate dielectric, there by influencing the electrical characteristics of OTFTs. These results show that the polarization direction of the photo-reactive insulator can affect the device performance.