首页> 外国专利> METHOD FOR MANUFACTURING TOP-GATE ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR OBTAINED BY THE SAME

METHOD FOR MANUFACTURING TOP-GATE ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR OBTAINED BY THE SAME

机译:制造顶部门有机薄膜晶体管和由其获得的有机薄膜晶体管的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic thin film transistor excellent in stability of electrical characteristics, and to provide an organic thin film transistor.;SOLUTION: The method for manufacturing a top-gate organic thin film transistor is characterized in that, with respect to an organic thin film transistor having a gate electrode, a gate insulating film, a source electrode and a drain electrode on a substrate, a gate insulating film is formed on an organic semiconductor film by a wet process using an insulating film-forming liquid containing (a) at least one organic solvent selected from propylene carbonate, acetonitrile and dimethylsulfoxide and (b) an organic compound soluble in the organic solvent.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种制造电特性稳定性优异的有机薄膜晶体管的方法,并提供一种有机薄膜晶体管。解决方案:顶栅有机薄膜晶体管的制造方法的特征在于对于在基板上具有栅电极,栅绝缘膜,源电极和漏电极的有机薄膜晶体管,使用绝缘膜通过湿法在有机半导体膜上形成栅绝缘膜。形成液,其含有(a)至少一种选自碳酸亚丙酯,乙腈和二甲基亚砜的有机溶剂,和(b)可溶于该有机溶剂的有机化合物。;版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012104672A

    专利类型

  • 公开/公告日2012-05-31

    原文格式PDF

  • 申请/专利权人 KANEKA CORP;

    申请/专利号JP20100252150

  • 申请日2010-11-10

  • 分类号H01L29/786;H01L21/336;H01L51/05;H01L51/30;H01L21/312;C08G77/388;C07F7/21;

  • 国家 JP

  • 入库时间 2022-08-21 17:42:02

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号