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METHOD FOR MANUFACTURING TOP-GATE ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR OBTAINED BY THE SAME
METHOD FOR MANUFACTURING TOP-GATE ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR OBTAINED BY THE SAME
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机译:制造顶部门有机薄膜晶体管和由其获得的有机薄膜晶体管的方法
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摘要
PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic thin film transistor excellent in stability of electrical characteristics, and to provide an organic thin film transistor.;SOLUTION: The method for manufacturing a top-gate organic thin film transistor is characterized in that, with respect to an organic thin film transistor having a gate electrode, a gate insulating film, a source electrode and a drain electrode on a substrate, a gate insulating film is formed on an organic semiconductor film by a wet process using an insulating film-forming liquid containing (a) at least one organic solvent selected from propylene carbonate, acetonitrile and dimethylsulfoxide and (b) an organic compound soluble in the organic solvent.;COPYRIGHT: (C)2012,JPO&INPIT
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