Field Effect Transistor Fabricated On Semiconducting Diamond Substrate for Application to Long Distance Wireless Power Transmission

摘要

In this paper, basic electrical properties of semiconducting diamond were investigated in order to check its capability for application to electron device. Especially, a field effect transistor was fabricated on diamond substrate, and its electrical properties were investigated. We could observe a clear current modulation characteristic from the field effect transistor. Maximum breakdown voltage was - 150 V. Above result indicates that the diamond field effect transistor is appropriate for high power device.