Field effect transistor fabricated on hydrogen-terminated diamond grown on SrTiO_3 substrate and iridium buffer layer

摘要

Up to now high performance devices have mainly been realized on HTHP single crystals with limited size. However, diamond of single crystal quality can also be grown on SrTiO_3 substrate using an iridium buffer layer. For the first time p-type surface channel FETs with sub-micron gatelength have been fabricated on such a substrate. Small signal, large signal and power measurements could be performed up to gigahertz frequencies. This has resulted in cut-off frequencies f_T = 9.6 GHz, f_(max(MAG)) = 16.3 GHz and f_(max(U)) = 17.3 GHz for L_G = 0,24 mum. For L_G= 0.9 mum a saturated RF power at 1 GHz of 0.2 W/mm could be measured. These results indicate that high quality of this quasi-substrate of approximately 0.6 cm~2 in size.