首页> 外文会议>2011 IEEE 24th International Conference on Micro Electro Mechanical Systems >Wafer-level mechanical and electrical integration of SMA wires to silicon MEMS using electroplating
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Wafer-level mechanical and electrical integration of SMA wires to silicon MEMS using electroplating

机译:使用电镀将SMA线与硅MEMS的晶圆级机械和电气集成

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This paper reports on the wafer-level fixation and electrical connection of pre-strained SMA wires on silicon MEMS using electroplating, providing high bond strength and electrical connections in one processing step. The integration method is based on standard micromachining techniques, and it potentially allows mass production of microactuators having high work density. SEM observation showed an intimate interconnection between the SMA wire and the silicon substrate, and destructive testing performed with a shear tester showed a bond strength exceeding 1 N. The first Joule-heated SMA wire actuators on silicon were fabricated and their performance evaluated. Measurements on a 4.5 x 1.8 mm2 footprint device show a 460 μm stroke at low power consumption (70 mW).
机译:本文报道了通过电镀在硅MEMS上对预应变SMA线进行晶圆级固定和电连接的过程,从而在一个处理步骤中提供了高结合强度和电连接。集成方法基于标准的微加工技术,并且潜在地允许批量生产具有高工作密度的微致动器。 SEM观察表明SMA线和硅基板之间紧密相连,并且使用剪切测试仪进行的破坏性测试显示结合强度超过1N。制造了第一批在硅上经焦耳加热的SMA线致动器,并对其性能进行了评估。在占地4.5 x 1.8 mm 2 的设备上进行的测量显示,在低功耗(70 mW)下的行程为460μm。

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