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Design and optimization of a low-noise cross-coupled fundamental VCO in 90nm CMOS for 60GHz applications

机译:针对60GHz应用的90nm CMOS低噪声交叉耦合基本VCO的设计和优化

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A methodology for the design and optimization of a low noise cross-coupled fundamental VCO for 60 GHz applications is presented in this paper. Using a parametric study, semi-empirical relations are derived for the oscillator elements, enabling optimization for phase noise, tuning range and power, The designed VCO is implemented in 90 nm standard CMOS technology, offers a frequency tuning range of 2.5 GHz around 58.7 GHz using a combination of analog control of AMOS varactors and a four-bit digital control bus of differential switched capacitance cells. The VCO yields a measured phase noise of -100 dBc/Hz at 1 MHz offset consuming 20 mW and -106 dBc/Hz consuming 55 mW.
机译:本文介绍了一种用于60 GHz应用的低噪声交叉耦合基本VCO的设计和优化方法。通过参数研究,可以得出振荡器元件的半经验关系,从而可以优化相位噪声,调谐范围和功率。设计的VCO采用90 nm标准CMOS技术实现,在58.7 GHz附近提供2.5 GHz的频率调谐范围结合使用AMOS变容二极管的模拟控制和差分开关电容单元的四位数字控制总线。在1 MHz偏移下,VCO产生的实测相位噪声为-100 dBc / Hz,消耗20 mW,在-106 dBc / Hz处测量的相位噪声为55 mW。

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