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Analysis and Design of an E-Band Transformer-Coupled Low-Noise Quadrature VCO in 28-nm CMOS

机译:28纳米CMOS中E波段变压器耦合低噪声正交VCO的分析和设计

摘要

This paper presents an E-band quadrature voltage-controlled oscillator implemented in 28-nm CMOS. Two fundamental oscillators are coupled by means of gate-to-drain transformers to realize accurate quadrature phases and switched coupled inductors are added for tuning extension. Closed-form expressions of the oscillation frequency and the tuning extension design parameters are derived. The time-variant nature of the circuit noise to phase noise (PN) of the presented topology is investigated, resulting in simple design guidelines for optimal design. Based on the proposed techniques, the realized prototype is tunable over two bands of almost 5 GHz each separated in frequency, while occupying only 0.031 {hbox {mm}}^{2} . The peak measured PN at 10-MHz offset is -{hbox {117.7 dBc/Hz}} from a 72.7-GHz carrier and -{hbox {110 dBc/Hz}} from a 88.2-GHz carrier and varies less than 3.5 dB within each band.
机译:本文提出了一种在28nm CMOS中实现的E波段正交压控振荡器。两个基本振荡器通过栅漏变压器耦合以实现精确的正交相位,并添加了开关耦合电感器以进行调谐扩展。得出振荡频率和调谐扩展设计参数的闭式表达式。研究了所提出拓扑的电路噪声相对于相位噪声(PN)的时变特性,从而为优化设计提供了简单的设计指南。基于所提出的技术,所实现的原型可在几乎5 GHz的两个频带上进行调谐,每个频带在频率上分开,而仅占用0.031 { hbox {mm}} ^ {2}。在10MHz偏移处测得的峰值PN从72.7 GHz载波为-{ hbox {117.7 dBc / Hz}},而从88.2 GHz载波为-{ hbox {110 dBc / Hz}},并且变化小于3.5每个频段内的dB。

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