机译:23-36.8 -GHz低噪声频率合成器,具有SiGe BICMOS的基本Colpitts VCO阵列,适用于5G应用
Institute of RF- & OE-ICs Southeast University Nanjing China;
Institute of RF- & OE-ICs Southeast University Nanjing China;
Institute of RF- & OE-ICs Southeast University Nanjing China;
Institute of RF- & OE-ICs Southeast University Nanjing China;
Institute of RF- & OE-ICs Southeast University Nanjing China;
Supply chains; Quality assessment; Product design; Safety; Analytical models; Powders; Pediatrics;
机译:采用0.13μmSiGe BiCMOS技术的22至36.8 GHz低相位噪声Colpitts VCO阵列
机译:22至36.8 GHz低相噪声Colpitts VCO阵列在0.13-μmsige bicmos技术中
机译:具有SiGe基本VCO的W波段低噪声PLL,适用于毫米波应用
机译:20 GHz VCOS使用跨耦合差分对和平衡Colpitts拓扑结构的分析与设计SiGE:C BICMOS技术
机译:用于基于延迟单元的VCO和频率合成器的低相位噪声,低时序抖动设计技术。
机译:用于5G应用的LTCC-集成介质谐振天线阵列
机译:具有多频带pmOs VCO的ΔΣ分数N频率合成器,适用于2.4和5GHz WLaN应用