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Analytical model for intrinsic carrier concentration in (101)-biaxially strained Si

机译:(101)双轴应变Si中本征载流子浓度的解析模型

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摘要

By analyzing the band structure of strained Si/(101) Si1−xGex, the relationship of whose intrinsic carrier concentration (ni) between Ge fraction (x) and temperature were obtained. And then, the model for the intrinsic carrier concentration of strained Si/(101) Si1−xGex was established. The results show that increases significantly due to the effect of the strain in strained Si/(101)Si1−xGex, the density of state effective masses decrease with increasing Ge fraction (x), and is directly proportional to temperature.
机译:通过分析应变Si /(101)Si 1-x Ge x 的能带结构,得出Ge分数(x)与Si((101)Si 1-x Ge x 之间的关系。获得温度。然后,建立了应变Si /(101)Si 1-x Ge x 的本征载流子浓度模型。结果表明,由于应变的影响,Si /(101)Si 1-x Ge x 的应变显着增加,状态有效质量的密度随着增加而降低Ge分数(x),与温度成正比。

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