Temperature-dependent Operation of Ge on Si p-I-n Photodetectors

摘要

We investigate the temperature dependence of p-I-n photodetectorsrealized in germanium on silicon. The dark current increases by afactor 1.6÷1.9 every 10°C and is typically dominated by generationin the space charge region, with diffusion contributing in the bestsamples. The NIR responsivity decreases with temperature indevices with a large defect-density, but is more stable in highquality photodiodes. These findings provide a relevant insight onthe design Ge-on-Si NIR detectors to be operated above roomtemperature.