P-I-N TYPE PHOTODETECTOR, PHOTOELECTRIC CONVERSION CIRCUIT AND PHOTOELECTRIC CONVERSION MODULE

摘要

PROBLEM TO BE SOLVED: To inhibit a dark current by reducing a leakage current, and to improve element characteristics by forming a fourth semiconductor layer, into which impurities are not doped intentionally, to a second semiconductor material having band gap energy larger than a first semiconductor material. ;SOLUTION: First or third semiconductor layers 30, 31, and 32 are laminated successively on a semiconductor substrate 20. The second and third semiconductor layers 31, 32 are formed in a mesa shape respectively. A first electrode layer 60 is formed on the top face of a second mesa section in an ohmic contact manner to the semiconductor layer 30. A second electrode layer 61 is shaped on the top face of a first mesa section in the ohmic contact manner to the semiconductor layer 32. A fourth semiconductor layer 40 is formed around the first or third semiconductor layers 30, 31, and 32. The fourth semiconductor layer 40 is constituted to a second semiconductor material having band gap energy larger than a first semiconductor material without intentionally doping impurities.;COPYRIGHT: (C)1997,JPO