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Germanium p-i-n photodetector on silicon substrate
Germanium p-i-n photodetector on silicon substrate
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机译:硅基板上的锗p-i-n光电探测器
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摘要
Devices useful, for example, as detectors in telecommunications systems have been formed utilizing a specific structure. In particular, a p-i-n device is fabricated on a silicon substrate having the necessary circuitry for signal processing. This p-i- n device is produced by depositing an intermediary region having a compositional gradient on this substrate and forming a germanium based p- i-n diode on the intermediary region.
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