Optical and Micro-Structural Properties of ZnO Thin Films Grown on Silicon Substrate by Pulsed Laser Deposition

摘要

ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd: YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photolumines-cence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 °C in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.