机译:通过脉冲激光沉积在GaAs(111)B衬底上生长的Al掺杂ZnO薄膜的电,光学和结构性质
Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway;
Department of Physics, Colorado School of Mines, Golden, CO 80401, USA;
S1NTEF Materials and Chemistry, NO-7465 Trondheim, Norway;
Department of Physics, Colorado School of Mines, Golden, CO 80401, USA;
Department of Physics, Colorado School of Mines, Golden, CO 80401, USA;
Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway;
Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway;
Al-doped ZnO; Transparent conductive oxide; Pulsed laser deposition; GaAs substrate;
机译:比较使用脉冲激光沉积在r-和c-Al_2O_3衬底上生长的未掺杂ZnO薄膜的结构,光学和电学性质
机译:通过脉冲激光沉积生长的外延和多晶无掺杂和铝掺杂的ZnO薄膜的电学和光学性质
机译:通过脉冲激光沉积生长的外延和多晶无掺杂和铝掺杂的ZnO薄膜的电学和光学性质
机译:脉冲激光沉积在硅衬底上生长的ZnO薄膜的光学和微结构性质
机译:通过脉冲激光沉积和溶胶-凝胶法控制氧化锌薄膜的电阻率和光学性质。
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:通过脉冲激光沉积生长的透明导电si掺杂ZnO薄膜的结构,电学和光学性质