193-nm Single Layer Resists Based on Advanced Materials

摘要

Recent advances in the 193-nm single-layer resist for forming finer patterns have led us to search for new resist materials for the ArF excimer laser. We describe a novel, mass productive single layer resist based on a hybrid hyper lactonic polymer which has high resolution, good hydrophilicity, and dry etch resistance. Further, we investigate the lactonic polymer, which has Mass-productive Ultimate Norbornyl group with Outstanding Solubility (MUNGOS).