Controlling NBTI degradation during static burn-in testing

摘要

Negative Bias Temperature Instability (NBTI) has emerged as the dominant PMOS device failure mechanism in the nanometer VLSI era. The extent of NBTI degradation of a PMOS device increases dramatically at elevated operating temperature and supply voltage. Unfortunately, both these conditions are concurrently experienced by a VLSI chip during the process of burn-in testing. Our analysis shows that even with a short burn-in duration of 10 hours, the degradation accumulated can be as much as 60% of the NBTI degradation experienced over 10 years of use at nominal conditions. Static burn-in testing in particular is observed to cause most NBTI degradation due to absence of relaxation phase unlike the case for dynamic burn-in testing. The delay of benchmark circuits is observed to increase by over 10% due to static burn-in testing. We propose the first technique to reduce the NBTI degradation during static burn-in test by finding the minimum NBTI induced delay degradation vector (MDDV) based on timing criticality and threshold voltage change (ΔV_TH) sensitivity of the cells. Further, only a subset of the input pins need to be controlled for NBTI reduction, thus our technique allows other objectives (such as leakage reduction) to be considered simultaneously. Experimental results show that the NBTI induced critical path delay degradation can be reduced by more than 50% using our proposed technique.