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首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >DFT and Minimum Leakage Pattern Generation for Static Power Reduction During Test and Burn-In
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DFT and Minimum Leakage Pattern Generation for Static Power Reduction During Test and Burn-In

机译:DFT和最小泄漏模式生成,可在测试和预烧期间降低静态功耗

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摘要

This paper presents a design for testability and minimum leakage pattern generation technique to reduce static power during test and burn-in for nanometer technologies. This technique transforms the minimum leakage pattern generation problem into a pseudo-Boolean optimization (PBO) problem. Nonlinear objective functions of leakage power are approximated by linear ones such that this problem can be solved efficiently by an existing PBO solver. A partitioning-based algorithm is applied for control point insertion and also CPU time reduction. Experimental results on the IEEE ISCAS'89 benchmark circuits using Taiwan Semiconductor Manufacturing Company 90-nm technology show that, for large circuits, the static power is reduced from 8.3% (without partition) to 17.47% (with 64 partitions). Besides, the overall CPU time is reduced from 3600 s (without partition) to 83 s (with 64 partitions). This technique reduces the static power without changing the manufacturing process or library cells.
机译:本文提出了一种可测试性和最小泄漏模式生成技术的设计,以减少纳米技术在测试和老化时的静态功耗。此技术将最小泄漏模式生成问题转换为伪布尔优化(PBO)问题。泄漏功率的非线性目标函数可以用线性目标函数近似,从而可以通过现有的PBO解算器有效地解决此问题。基于分区的算法适用于控制点插入以及CPU时间的减少。使用台湾半导体制造公司90纳米技术的IEEE ISCAS'89基准电路的实验结果表明,对于大型电路,静态功率从8.3%(不带分区)减少到17.47%(带64个分区)。此外,整个CPU时间从3600 s(不带分区)减少到83 s(带64个分区)。此技术可在不更改制造过程或库单元的情况下减少静态功耗。

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