Strain Characterization of AsH3 Induced Exchange Reactions in InP Grown by OMVPE

摘要

Behavior of As-P intermixing in hcterojunctions of As-compounds grown on InP (001) has been inferred from strain of very thin mismatched layers inserted periodically in InP to form multilayer superlattice structures. Strain components are observed for both As-P exchange in the InP and from inserted layer growth. The data suggest that for As-compounds grown on an InP surface the availability of As for both layer growth and As-P exchange is rate-limited, most likely by surface kinetics, and an optimum growth rate occurs for minimizing the As-P exchange. There is also a fixed InAs strain component inherent to interfaces of As-compounds on InP. Monolayer thickness layers of A1P or GaP grown on the InP to change the surface chemical bonds are shown to reduce the As-P exchange somewhat but they do not stabilize the InP surface against exposure to AsH_3. H_2 and PH_3-exposures of the As-terminated surface show that P-As exchange to desorb the As is slow compared to As adsorption on InP by AsH_3 exposure.