Growth of InP, GaP, and GaInP by Chemical Beam Epitaxy using Alternative Sources

摘要

This paper reports the growth of indium phosphide (InP), gallium phosphide (GaP), and gallium indium phosphide (GalnP) by chemical beam epitaxy (CBE) using alternative group Ⅲ and Ⅴ precursors. For the work reported here, ethyldimethylindium (EDMIn) and triisopropylgallium (TIPGa) were used as the In and Ga precursors, respectively, in conjunction with three alternative phosphorous (P)-sources: tertiarybutylphosphine (TBP), bisphosphinoethane (BPE), and trisdimethylaminophosphine (TDMAP). We also report for the first time the growth of GalnP by CBE without precracking the group V source using TIPGa, EDMIn, and TDMAP.