Molecular beam epitaxy growth of InP layers on GaAs substrates using GaP decomposition source

摘要

The growth of InP layers on GaAs substrates by molecular beam epitaxy (MBE) using gallium phosphide (GaP) as a phosphorus source was investigated. The surface reconstruction during the growth was monitored by reflection high energy electron diffraction (RHEED), the high-quality InP layers on GaAs substrates with specular surface morphology could be obtained. The effects of growth temperatures and V/III ratios on the properties of InP eip-layers were studied. The undoped layers showed n-type conduction behavior with a background carrier concentration of 4×10~16- 9.5×10~18 cm~-3 and mobility of 237-1761 cm~2V~-1S~-1, both at room temperature, as measured by van der Pauw method. Our results showed a strong dependence of growth quality on growth conditions such as growth temperatures and P_2/In flux ratios.