首页> 外文OA文献 >Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy

【2h】

Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy

机译：通过气源分子束外延在GaInp中重新分布和GaInp / alInp隧道二极管的生长

页面导航

著录项
相似文献
相关主题

著录项

作者
Wei Li; Jari Likonen; Jouko Haapamaa; Markus Pessa;
展开▼
作者单位

展开▼
年度 2000
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy [J] . Kikuchi A., Kaneko Y. Electronics Letters . 1990,第20期

机译：气源分子束外延生长具有GaInP / AlInP超晶格限制层的GaInP / AlInP可见光激光器的室温连续波操作
2. Strained single quantum well (SSQW) GaInP/AlInP visible lasers fabricated by novel shutter control method in gas source molecular beam epitaxy [J] . Nomura I., Kishino K. Electronics Letters . 1992,第9期

机译：新型快门控制方法制备的气源分子束外延应变单量子阱GaInP / AlInP可见光激光器
3. Low (2.0 kA/cm/sup 2/) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15 degrees off [J] . Kikuchi A., Kishino K. Electronics Letters . 1991,第14期

机译：气源分子束外延在15度角下生长的629 nm GaInP / AlInP多量子阱激光器的低（2.0 kA / cm / sup 2 /）阈值电流密度操作
4. Solid source molecular beam epitaxy growth of GaInP/AlGaInP heterostructures and 600-nm-range quantum well laser diodes [C] . Toivonen, M., Jalonen, Indium Phosphide and Related Materials, 1997., International Conference on . 1997

机译：GaInP / AlGaInP异质结构和600 nm范围量子阱激光二极管的固体源分子束外延生长
5. Molecular beam epitaxy (MBE) growth of rare earth doped gallium nitride for laser diode application. [D] . Park, Jeongho. 2006

机译：用于激光二极管的稀土掺杂氮化镓的分子束外延（MBE）生长。
6. High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy [O] . Shulong Lu, Lian Ji, Wei He, 2011

机译：全固态分子束外延生长的高效GaAs和GaInP太阳能电池
7. Three-Dimensional Imaging of Beam-Induced Biasing of InP/GaInP Tunnel Diodes [O] . Cristina Cordoba, Xulu Zeng, Daniel Wolf, 2019

机译：光束诱导的INP / GAIPP隧道二极管偏置的三维成像
8. GaInP And AllnP Grown by Elemental Source Molecular Beam Epitaxy. (Reannouncementwith New Availability Information) [R] . Varriano, J. A., Koch, M. W., Johnson, F. G., 1992

机译：元素源分子束外延生长的GaInp和allnp。（重新公布新的可用性信息）

Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy

著录项

相似文献

相关主题

期刊订阅